国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3） C30（3）
IPC小类 C01B（3）
IPC C30B025/00（3）
发明人
公开年 2011（2）
申请年 2011（3）
专利权人

Forming bilayer hexagonal graphene single crystal domain used as e.g. transistor involves heating catalyst having metal substance and alloy, into chemical vapor deposition reaction chamber, adding carbon/hydrogen/protective gas and cooling.

BI H, HUANG F, LIN T, WAN D

Method for preparing single-crystal graphene in electronic device, involves coating hydrocarbon in metal foil, implementing thermal decomposition treatment in foil, and cooling foil to room temperature to obtain graphene sheet metal.

CHEN Y, LI P, LI Y, WANG Z, ZHANG W

Preparation of sulfur-doped graphene thin film by heating and preprocessing metal substrate in atmosphere of reduction protective gas, vacuuming container, and introducing mixed liquid of carbon source and sulfur source.

GAO H