国家/地区
IPC部 C（2）
IPC大类 C01（2） C30（2）
IPC小类 C01B（2）
IPC C01B032/186（2）
发明人
公开年
申请年 2019（2）
专利权人

Growing single crystal graphene on a metal substrate comprises placing metal substrate and alkali metal halide in a reactor, inducing chemical vapor deposition of graphene on the metal substrate by heating.

BAKWONYIL, KIM S H

Preparing single-layer single crystal graphene comprises e.g. pretreatment of copper foil, substrate annealing, growing, and cooling down.

WEN Y, HUANG R, HUANG Z, LAI F