国家/地区 美国（2）
IPC部 C（2）
IPC大类 C01（2） C23（2） C30（2）
IPC小类 C01B（2）
IPC C23C016/26（2）
发明人
公开年 2017（2）
申请年
专利权人

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J