国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B025/02（2）
发明人
公开年 2019（2）
申请年 2019（2）
专利权人

Preparing silicon/silicon carbide/graphene material involves pretreating single crystal silicon substrate into a substrate holder of a cold wall type laser chemical vapor deposition reactor, and vacuuming.

TU R, HU Z, ZHANG S, ZHANG L

Growing large mismatched indium gallium arsenide material involves covering layers of graphene on mismatched substrate, placing in growth chamber of gaseous source molecular beam epitaxy system, introducing arsine and pyrolyzing.

GU Y, WANG H, ZHANG Y, SHAO X, LI X, GONG H