国家/地区
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B025/10（3）
发明人
公开年 2014（2）
申请年 2013（3）
专利权人

Growing etching free graphene useful in transparent semiconductor device, comprises preparing a structure comprising conductive metal oxide layer formed on a substrate and exposing structure to gas and growing graphene on layer by heating.

CHOI J W

Single-crystal nitrogen-functionalized graphene nano-flake, useful in a multilayer composite for a polymer electrolyte membrane fuel cell, comprises specified amount of functionalized nitrogen.

MEUNIER J, BERK D, VASILICA PRISTAVITA R, BINNY D, MENDOZA GONZALEZ N, PASCONE P, VASILICA P R, MENDOZA G N

Single-crystal graphene preparation device has heating device that is located in cavity whose two sides are provided with air inlet and air outlet connected with one end of exhaust pipe whose other end is connected with vacuum pump.

WANG C, WANG L