国家/地区 韩国（2） 美国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B025/10（2）
发明人 SHIN H（2）
公开年
申请年
专利权人 SAMSUNG ELEC.（2）

Fabricating hexagonal boron nitride comprises placing catalytic metal having hexagonal crystal structure and lattice mismatch with hexagonal boron nitride in chamber and growing hexagonal boron nitride on the catalytic metal while supplying nitrogen source and boron source into the chamber.

LEE C, SHIN H, HONG S, MA K, LEE C S, SUK S H, SHIN H J, LI C, SHEN X

Graphene pattern for electromagnetic element, has graphene with layers, which is polycyclic aromatic molecule formed by covalent bond of carbon atoms with one other, is formed in pattern layout on at least one side of base plate.

CHOI J Y, SHIN H J, YOON S M, CHOI J, SHIN H, YOON S