国家/地区 中国（5）
IPC部 C（5）
IPC大类 C30（5） C23（2） H01（2）
IPC小类 C30B（5）
IPC C30B028/14（5）
发明人 HAO Y（2） MA P（2） NING J（2）
SUN H（2） WANG D（2） ZHANG J（2）
公开年 2022（3） 2021（2）
申请年 2021（5）
专利权人 SUN H（2） UNIV XIDIAN（2）

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J

Transferring gallium oxide epitaxial layer based on van der Waals film comprises e.g. using chemical vapor deposition to make polycrystalline continuous graphene film, extending gallium oxide on graphene film and adhering thermal release adhesive tape to gallium oxide epitaxial layer upper surface.

HAO Y, MA P, ZHANG J, WANG D, CHEN D, NING J

Preparing transferable large size gallium oxide film involves growing graphene on the copper foil substrate, and then removing copper foil substrate, removing graphene of the copper foil substrate transferred to cleaned sapphire substrate.

HAO Y, MA P, JIAO P, WANG D, ZHANG J, FENG Q, ZHANG Y, NING J

Elastic air-tight piece comprises elastic air-tight piece set at outlet end of preparation chamber and hermetically connected with outlet end of preparation chamber, where elastic air-tight piece is provided with conveying belt assembly.

SUN H

Preparation chamber of scale preparation device of CVD deposited graphene, has main chamber outlet end and auxiliary chamber inlet end located below liquid level of liquid airtight tank, auxiliary chamber includes elastic airtight component.

SUN H