国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC
发明人 LI X（2）
公开年 2019（2）
申请年 2019（2）
专利权人

Growing large mismatched indium gallium arsenide material involves covering layers of graphene on mismatched substrate, placing in growth chamber of gaseous source molecular beam epitaxy system, introducing arsine and pyrolyzing.

GU Y, WANG H, ZHANG Y, SHAO X, LI X, GONG H

Growth method of multilayer graphene single crystal film by placing copper foil in hydrogen atmosphere, heating and annealing, keeping constant temperature in copper foil, and filling mixed gas of hydrogen gas, methane and argon gas.

LI X, SHEN C, QING F