国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC
发明人 ZHANG S（2）
公开年 2019（2）
申请年 2019（2）
专利权人

Method for growing large-area single crystal graphene, involves using nozzle corresponding to substrate pattern to carry out fixed point carbon source transportation and passing methane for fixed point nucleation for graphene growth.

LAN F, WANG Z, ZHANG S, DONG Z, HAO J

Preparing silicon/silicon carbide/graphene material involves pretreating single crystal silicon substrate into a substrate holder of a cold wall type laser chemical vapor deposition reactor, and vacuuming.

TU R, HU Z, ZHANG S, ZHANG L