国家/地区 中国（4） 美国（2） 世界知识产权组织（2）
IPC部 C（4）
IPC大类 C30（4）
IPC小类 C30B（4）
IPC B82Y040/00（2） C01B031/04（2） C23C016/26（2）
C30B033/02（2）
发明人 DING G（4）
公开年 2012（4）
申请年 2012（3） 
专利权人 CHINESE ACAD.（3） DING G（2） SHANGHAI INS.（2） XIE X（2）

Controllable layer number graphene thin film, prepared by preparing germanium-silicon substrate, carburizing and heating copper-nickel composite substrate with carbon source gas.

DING G, JIANG M, XIE X, ZHU Y

Bandgap opening in graphene, comprises e.g. placing the graphene on silicon chip, introducing into ion implanter, bombarding the graphene on silicon sheet by using ion beam to produce defective product, and performing annealing treatment.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X