国家/地区 中国（5）
IPC部 C（5）
IPC大类 H01（3） C07（2）
IPC小类 C07C（2） C07D（2） H01L（2）
IPC C07C211/31（2） C07C211/50（2） H01L051/05（2）
H01L051/40（2）
发明人 CHANG X（5）
公开年 2022（5）
申请年 2021（3） 
专利权人 BEIJING WEIM.（2） UNIV NANKAI（2）

General-purpose shielding material useful for direct/alternating current high-voltage cables comprises base resin, crosslinking agent, antioxidant, carbon black, doped graphene dispersant, where doped graphite is nitrogen-doped graphene, boron-doped graphene and boron-nitrogen co-doped graphene.

PEI C, LIU Z, CHANG X, ZHANG H, LIU J, WANG W, QI X, LIU H

Magnetic nano fiber demulsifier useful for low-temperature gathering and transportation of crude oil, comprises ferric oxide nanoparticles as inner layer, magnetic graphene oxide nanocomposite as middle layer and nonionic surfactant as outer layer.

YANG S, ZHANG W, PANG Y, LI X, CHANG X, GUO J, ZHANG J, LIU J, ZHAO D, ZHONG R, TANG S, YE F, YAO B, ZHAO Y, LI Z

Preparing sulfonated graphene-barium salt powder material for anti-static anti-corrosion paint involves slowly adding soluble barium salt solution to sulfonating dispersion graphene to react, aging, washing, centrifuging and separating dry powder material.

CHANG X, CUI K, LIU Z, FENG C, JIN S, YAN Z

New diamine compound with quantum interference effect, used in preparation of single-molecule field effect transistor.

CHANG X, WANG B, JIA C, LI P, GUO X

New plane conjugated molecular compound used in single-molecule field-effect transistor comprising graphene gate electrode layer, bismuth selenite dielectric bottom layer, and hexagonal boron nitride dielectric top layer.

CHANG X, JIA C, ZHANG M, LI P, GUO X