国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/04（4）
发明人 ZHANG F（4）
公开年 2013（4）
申请年 2013（4）
专利权人 UNIV XIDIAN（3）

Preparation of oxidized graphene film vertical-type nano-structured gas sensor by dissolving graphene oxide and agent in mixed solvent, assembling solution on substrate, heating, photo-etching and stripping and reducing with gold electrode.

ZHANG F, CHEN L, PENG C, WANG Y

Preparation of large-area graphene used for manufacturing microelectronic devices and biological sensors, involves cleaning silicon substrate, placing in deposition reaction chamber, introducing propane and silane gas, and annealing.

GUO H, LEI T, LIU J, ZHANG F, ZHANG Y

Preparing large-area graphene on silicon substrate based on nickel film annealing comprises e.g. growing carbon layer on substrate, growing C3-silicon carbide heteroepitaxial film, hydrogen etching, depositing nickel layer and annealing.

GUO H, LEI T, ZHANG F, ZHANG Y, HU Y

Preparing large-area graphene based on nickel film annealing and chlorine reaction comprises e.g. growing carbon layer on substrate, growing 3C-silicon carbide heteroepitaxial film, hydrogen etching, depositing nickel layer and annealing.

GUO H, LEI T, WEI C, ZHANG F, ZHANG Y