国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B025/18（3） C30B029/02（3）
发明人 XU X（3）
公开年 2015（3）
申请年 2015（2） 
专利权人 UNIV SHANDON.（2）

Oxide substrate-assisted preparation of large-size monocrystalline graphene by placing metal foil on oxide substrate, and growing high-quality large-size monocrystalline graphene on metal foil surface.

LIU K, ZHANG Z, XU X, YU D, WANG E

In-situ atmosphere effect epitaxial growing of graphene on surface of large-diameter hydrogen/hydrogen-silicon carbide substrate used for electronics field by heating substrate with silicon or silicon carbide, decomposing and etching.

CHEN X, SUN L, XU X, ZHAO X

Method for growing graphene in sides of silicon carbon surface, involves connecting pneuma source with single crystal growing furnace, and reducing heating temperature of furnace to room temperature.

CHEN X, SUN L, XU X, YANG Z, ZHAO X