国家/地区 印度（2）
IPC部 B（2）
IPC大类 B01（2） H01（2）
IPC小类 B01J（2）
IPC
发明人 KHOT S D（2）
公开年
申请年 2022（2）
专利权人

Preparing cobalt tungstate/ graphene oxide material on conducting substrate, involves forming uniform layer of cobalt ions, at preset conditions, immersing cleaned substrate in anionic precursor solution, reacting tungstate ions with pre-adsorbed cobalt ions, forming cobalt tungstate thin film.

NIKAM R P, KHOT S D, BAGWADE P P, LOKHANDE C D

Synthesizing reduced graphene oxide (rGO)/dysprosium selenide film on solid substrate used in energy storage device, comprises immersing substrate in rGO aqueous solution, dysprosium nitrate and sodium selenosulfate to form film.

LOKHANDE C D, KHOT S D, NIKAM R P, BAGWADE P P, MALAVEKAR D B