国家/地区 台湾（4）
IPC部 C（4）
IPC大类 C01（4） B82（3） B32（2）
IPC小类 C01B（4）
IPC B82Y030/00（2） B82Y040/00（2） C01B031/04（2）
C01B032/20（2）
发明人 LIN I（4） SONG J（2） SUNG C（2）
公开年 2018（2）
申请年 2016（2） 
专利权人 LIN I（4）

Device to quickly produce graphene/nano-metal-oxide composite material and method therefor solving problems in prior art when producing graphene/nano-metal-oxide composite material including poor purity and inefficiency.

LIN I

Device for rapidly producing graphene and method thereof capable of producing graphene with an intact structure at a high production speed.

LIN I

Fabricating patterned graphene, comprises forming catalytic layer on substrate and carbon layer of e.g. iron on catalytic layer, photolithographically etching on carbon layer and heating obtained layer to form patterned graphene layer.

SUNG C, LIN I, LIN H, LIN Y, SONG J

Forming graphene layer used in e.g. transistors, solar panels, involves mixing carbon source with molten solvent, precipitating carbon source from solvent to form graphite layer, and separating graphite layer into several graphene layers.

SUNG C, HU S C, LIN I, YU C, SONG J