国家/地区 韩国（2）
IPC部 C（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2）
IPC H01L021/02（2）
发明人 JUNG A（2）
公开年
申请年
专利权人 SAMSUNG ELEC.（2）

Interconnect structure for electronic device, comprises first dielectric layer including trench, conductive wire filling inside of trench, first cap layer on top surface of conductive wire, first cap layer including doped graphene, and doped graphene being graphene doped with group fifth element.

JUNG A, KIM S, SHIN K, SHIN K W, KIM S T, JUNG A R

Formation of nanocrystalline graphene used for semiconductor device, involves arranging substrate in chamber, forming protective layer, injecting reaction gas, generating plasma, and growing nanocrystalline graphene on protective layer.

JUNG A, SHIN K, BYUN K, SHIN H, LIM H, NAM S, SONG H, CHO Y, JUNG A R, SHIN K W, BYUN K E, SHIN H J, LIM H S, NAM S G, SONG H J, CHO Y C