国家/地区 中国（3）
IPC部 H（3）
IPC大类 H01（3） C01（2）
IPC小类 C01B（2） H01L（2）
IPC H01L029/16（2） H01L029/78（2） H01L029/786（2）
发明人 CHO B（2） CHO B J（2）
公开年
申请年
专利权人 KOREA INST SCI TECHNOLOGY（3）

NaCl-rGO composite for a positive electrode active material of a sodium secondary battery (all claimed), such as mobile phones, camcorders, research and development efforts on electrochemical devices, comprises rGO refers to reduced graphene oxide, and sodium chloride nanoparticles are located rGO.

CHANG W Y, JUNG H, KIM E S, IQRA M, ROH H K, CHUNG K Y, ZHANG Y, ZHENG X, KIM E, ROH H, ZHENG J, NOH H K, JUNG H G, CHANG W

Manufacture of n-doped graphene used for manufacturing electrical components, involves exposing graphene to ammonium fluoride, leading to formation of fluorine layer on portion of surface of graphene layers.

BONG J H, CHO B J, SUL O, YOON H A, ALEXANDER Y H, SUL W J, CAO B, FENG Z, XUE W, CHO B, BONG J

Graphene electronic device e.g. FET, has graphene channel layer formed on gate insulating layer, source electrode formed on end of graphene channel layer, and drain electrode formed on another end of graphene channel layer.

SONG H, CHO B, SEO S, SHIN W, SONG H J, CHO B J, SEO S A, SHIN W C, SONG C, SIN W