国家/地区 世界知识产权组织（25）
IPC部 B（25）
IPC大类 B32（25）
IPC小类 B32B（25） B82Y（20） C01B（19）
B05D（10） C23C（10） H01B（10）
H01L（10） B82B（7） C08K（5）
C09D（5） C07C（3） C08J（3）
C30B（3） G02F（3） B29C（2）
IPC B82Y030/00（18） B82Y040/00（16） C01B031/02（16）
C01B031/04（15） B32B009/00（11） C01B031/00（9）
H01B001/04（8） C23C016/26（7） B05D005/12（6）
B32B009/04（5） B82B001/00（5） B82B003/00（5）
H01L021/02（5） B32B005/16（4） B82Y099/00（4）
发明人 KIM H K（4） BAE S（3） BAE S K（3）
GANG B S（3） GEUN K H（3） HONG B H（3）
HUI H B（3） KIM H（3） AHN J（2）
HAN T H（2） HYEON A J（2）
公开年 2011（25）
申请年 2011（11）  2010（9）  2009（5） 
专利权人 GRAPHENE SQU.（3） UNIV SUNGKYU.（3） AHN J（2） BAE S（2）
HONG B H（2） KIM H K（2） UNIV SUNGKYU.（2）

Method for guiding optical signal on layers of graphene to create optical device e.g. ribbon waveguide beam combiner or splitter, involves arranging portion of layer of graphene to provide conductivity.

ENGHETA N, VAKIL A

Composition, useful in e.g. high speed transistors, electronic devices, sensors, solar cells, optoelectronic devices, logic devices, ultra capacitors, and actuators, comprises unaffixed graphene particulates.

BERRY V, MOHANTY N, MOORE D S

Preparation of graphene-type conductive material involves applying oxide graphene sol and metal salt solution and/or metal colloidal solution on substrate layer, separating, forming solid film and treating at specified condition.

LIANG M, ZHI L

Antistatic film, useful e.g. as transparent or semitransparent antistatic films, comprises conductive particles comprising single-layer or multi-layer graphene and binder.

KOO C M, HONG S M, HWANG S S, KWAK S, BAEK K Y, MIN K H, PARK Y D, KWAK H L, KIM M H, KIM B R, CHOI S, HAN T H, CHOI S S, KWAK S J

Resin composition for synthetic resin molded product and laminated component, comprises synthetic resin and flake slice graphite obtained by laminating graphene sheet.

TAKAHASHI KATSUNORI, INUI NOBUHIKO, NAGATANI NAOYUKI, MUKOHATA DAISUKE, TANIGUCHI KOUJI, NARUTA MITSURU, TAKAHASHI K, INUI N, NAGATANI N, MUKAIHATA D, TANIGUCHI K, NARUTA W, MUKOHATA D, NARUTA M, NAOYUKI N, KKOUJI K

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U

Transparent electrode for optoelectronic applications e.g. organic photovoltaics and organic light emitting devices, comprises a grid structure, a graphene film associated with the grid structure, and a substrate.

TOUR J M, ZHU Y, TOUR J, SUN Z, YAN Z, RUAN G, PENG Z

Electromagnetic interference shielding method for electronic/electrical machinery and apparatus e.g. TV, involves forming graphene on outer side portion or inner side portion of graphene growth supporter by using chemical deposition process.

BAE S K, CHOI J, HONG B H, KANG J, KIM H K, KIM Y J, BUNG C J, GANG B S, GEUN K H, HUI H B, JIN K Y, MO G J, BAE S, KIM H

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K

Graphene nanomesh for forming transistor, sensor, and graphene structure, comprises sheet of graphene having periodically arranged apertures, where the apertures have a substantially uniform periodicity and substantially uniform neck width.

DUAN X, HUANG Y, BAI J