国家/地区 韩国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/02（3）
发明人
公开年 2012（2）
申请年
专利权人

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Graphene useful in power storage device e.g. display devices having at least one hole inside a ring-like structure formed by carbon and nitrogen or carbon and at least one element selected from Group 16 element and halogen.

HIROHASHI T, OGUNI T, KOKUNI T

Preparing nitrogen doped-graphene involves reacting organic material with amino and functional group e.g. amide group with graphite in reaction medium e.g. polyphosphoric acid and heat treating the prepared organic material-grafted graphene.

JEON I Y, BAEK J H, BAEK J B