国家/地区 中国（2） 韩国（2） 美国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC H01L029/16（2）
发明人 JIN C（2）
公开年
申请年
专利权人

Interconnect structure for use in electronic device, has cap layer provided on surface of conductive wiring and which includes nanocrystalline graphene comprising nano-sized crystals.

BYUN K, SHIN K, KIM Y, SHIN H, SONG H, LEE C, KIM C, CHO Y, BIAN Q, SHEN J, JIN Y, SHEN X, SONG X, LI C, JIN C, ZHAO L, BYUN K E, SHIN K W, HUN K Y, SHIN H J, SONG H J, LEE C S, CHO Y C

Tunneling diode used for diode-based optoelectronic device, consists of silicon quantum dot layer formed on silicon oxide thin film, doped layer having structure having graphene-silicon quantum dot hybrid structure, and electrode.

CHOI S H, SHIN D H, KIM S, SUK H C, DONG H S, SUNG K, CHIO S, SHIN D, JIN C