国家/地区 中国（3） 韩国（2） 美国（2）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/04（4）
发明人 JIN C（4）
公开年 2015（4）
申请年 2015（2） 
专利权人 NINGBO CARL .（2） UNIV NINGBO .（2）

Photodiode useful in optoelectronic device, comprises e.g. a silicon quantum dot layer containing silicon quantum dots formed on silicon oxide thin film and a graphene-silicon quantum dot hybrid structure formed on silicon quantum dot layer.

SUK H C, DONG H S, SUNG K, CHOI S H, SHIN D H, KIM S, CHIO S, SHIN D, JIN C, DONGHEE S, SHIGAO C, SUNGKIM

Synthesis of visible light reduced insoluble graphene, involves stirring expanded graphite, sodium persulfate, sodium vanadate, phosphotungstic acid and deionized water, vacuum filtering, washing, drying, reducing, and filtering.

JIN C, LI T, WANG S, MAO X, WANG K, YE C, PENG G

Synthesis of visible light reduced soluble graphene composite material, involves stirring expanded graphite, sodium persulfate, sodium vanadate, phosphomolybdic acid and deionized water, , washing, oxidizing and reducing.

JIN C, LI T, WANG S, MAO X, WANG K, YE C, PENG G

Producing graphene, useful e.g. in secondary cell electrode comprises e.g. performing thermochemical reaction of crystalline carbide compound and halogen element-containing gas, and performing acid treatment, and reduction reaction.

YEON S H, SHIN K H, JIN C S, JUNG K N, JEON J D, SHIM J, YANG J H, LEE B S, JEON M S, WOOK A, YEON S, SHIN K, JIN C, JUNG K, JEON J, YANG J, LEE B, AHN W