国家/地区 美国（3） 世界知识产权组织（2）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C30B029/02（3） C01B031/04（2） C30B025/02（2）
发明人
公开年 2014（3）
申请年 2014（3）
专利权人

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L

Forming a graphene film on a silicon carbide material involves heating the silicon carbide material to a growth temperature, and exposing the silicon carbide material to a growth atmosphere comprising a halogen species.

SUDARSHAN T S, CHANDRASHEKHAR M S, RANA T

Growing graphene used e.g. in graphene material, comprises annealing metal substrate up to growth temperature for annealing time period and in presence of non-reducing gas, and introducing gas mixture to grow graphene over the substrate.

DUAN X, ZHOU H