国家/地区 美国（3） 韩国（2）
IPC部 C（3） H（2）
IPC大类 C01（3）
IPC小类 C01B（3） C23C（3） H01B（2）
IPC C01B031/02（3）
发明人 JEON S（2） LEE J（2）
公开年
申请年 2013（2） 
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（3）

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Manufacture of graphene used for e.g. touch screen, involves forming transition metal catalyst layer on substrate, supplying carbon source vapor to chamber and segregating graphene from carbon component in catalyst-layer surface.

JEON S, LEE J, OH S