国家/地区 韩国（2）
IPC部 C（2）
IPC大类 C23（2）
IPC小类 C23C（2）
IPC C23C016/26（2）
发明人
公开年 2015（2）
申请年
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（2）

Producing graphene-copper composite thin layer, comprises producing a copper oxide layer on metal substrate by electroplating, producing a hydrophobic layer of copper by reducing copper oxide layer, and producing graphene thin film.

KIM G, OH I K

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S