国家/地区 日本（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B032/18（2）
发明人 IFUKU R（2）
公开年
申请年
专利权人 TOKYO ELECTR.（2）

Detecting abnormal growth of graphene by preparing inspected object having graphene film formed by chemical vapor deposition on substrate, using dark-field optical system to receive light from film and detecting abnormal growth of graphene.

IFUKU R, MATSUMOTO T, FUJIO A, SAITO K, RYOTA I, TAKASHI M, AKIRA F, KOUSAKU S

Production of graphene used in semiconductor applications, involves forming catalyst metal film on substrate, which includes introducing carbons into catalyst metal film, heating catalyst metal film, and cooling catalyst metal film.

NISHIDE D, MATSUMOTO T, IFUKU R