国家/地区 美国（2）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/184（3）
发明人 WANG J（3）
公开年
申请年
专利权人 APPLIED MATE.（2）

Processing semiconductor for producing high quality devices and structures, involves delivering carbon-containing precursor and hydrogen-containing precursor to processing region of semiconductor processing chamber, forming layer of graphene on substrate positioned in processing region of chamber.

INGLE N K, MALLICK A B, SINGHA R S, WANG J

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Preparing graphene surface-coated metal copper or nickel comprises e.g. pre-processing and processing the graphite oxide, and placing the graphite oxide after processing ultrasonic treatment to obtain oxidized graphene.

CHEN W, WANG J, CUI P, ZUO Y