国家/地区 中国（3） 韩国（3） 美国（3） 日本（2） 世界知识产权组织（2）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4） C01B（3） H01G（2）
H01L（2）
IPC C23C016/02（4）
发明人
公开年 2015（4）
申请年 2014（2） 
专利权人

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Preparation of graphene nanobelt-aluminum supercapacitor collector electrode involves preparing aluminum substrate having surface covered with catalyst grains, and depositing in plasma enhanced chemical vapor deposition vacuum device.

FENG J, LIN J, QI J, ZHANG X, TAN X, GUO J