国家/地区 韩国（2）
IPC部 C（3） H（2）
IPC大类 C23（3）
IPC小类 C23C（3） C01B（2） H01L（2）
IPC C23C016/448（3）
发明人
公开年 2012（2）
申请年 2011（3）
专利权人

Formation of metal oxide thin film on graphene for e.g. inverted organic solar cell, involves dissolving metal precursor in solvent, ultrasonically treating, dispersing droplets, and adsorbing droplet on graphene with carrier gas.

JIN S H, SIK S G, YEONG C J, KIM S W, SHIN H J, CHOI J Y, SHIN K S

Synthesis of graphene involves preparing dielectric substrate, mounting electric furnace on substrate, increasing reaction temperature, and injecting carbon precursor on substrate.

SON M H, SONG H J, CHOI H C

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K