国家/地区 美国（4） 中国（2） 韩国（2） 台湾（2） 世界知识产权组织（2）
IPC部 C（4）
IPC大类 C04（4）
IPC小类 C04B（4）
IPC H01L021/02（4）
发明人 HU S C（2） LIN I（2） SUNG C（2）
YU C（2）
公开年 2021（2）
申请年 2020（2） 
专利权人 HU S C（2） LIN I（2） SUNG C（2） YU C（2）

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Doping method involves stacking sacrificial layer on doped layer, arranging doping material on the sacrificial layer, arranging electrodes on doping material and doped layer, and doping doping material into doped layer.

SON K, KIM T, SON A

Forming graphene layer for e.g., LEDs, by mixing carbon source with horizontally oriented molten solvent, precipitating carbon source to form graphite layer across molten solvent, and separating graphite layer into a set of graphene layers.

SUNG C, HU S C, LIN I, YU C

Forming graphene layer used in e.g. transistors, solar panels, involves mixing carbon source with molten solvent, precipitating carbon source from solvent to form graphite layer, and separating graphite layer into several graphene layers.

SUNG C, HU S C, LIN I, YU C, SONG J