国家/地区 日本（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C30B029/02（2）
发明人
公开年 2017（2）
申请年 2016（2） 
专利权人

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Composite material used for manufacturing graphene film, consists of single-crystal sapphire substrate having off-angle degree of specified value, metal film and graphene film, in order.

AOTA NATSUKO, AIDA HIDEO, TACHIBANA MASARU, MORISAKO SHIYO, AOTA N, AIDA H, TACHIBANA M, MORISAKO S