国家/地区
IPC部 C（2）
IPC大类 C23（2）
IPC小类 C23C（2）
IPC G01J005/20（2）
发明人
公开年 2021（2）
申请年
专利权人

Vanadium pentoxide heat-sensitive film with sandwich structure used for silicon-based semiconductor, comprises substrate layer, buffer layer, and heat-sensitive layer including vanadium pentoxide layers and carrier concentration increasing layer located between adjacent vanadium pentoxide layers.

HUANG L, LU H, MA Z, WANG C, FANG M, CAI G, GAO J, HUANG S

Infrared photodetector has mesa on substrate and comprising layer of amorphous silicon for amplifying photocurrent, layer of long wave infrared radiation absorbing material for producing photocurrent, and passivation layers.

LO Y, ZHOU J, MIAH M A R, ZHANG Y