国家/地区 美国（4）
IPC部 B（4）
IPC大类 B01（4）
IPC小类 B01J（4）
IPC C01B031/04（3） C23C016/26（3） C23C016/46（2）
发明人
公开年 2016（3）
申请年 2015（4）
专利权人

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Production method for obtainment of three-dimensional closed graphene-based nano/microstructures involves flowing second fluid through second flow path and exiting through second fluid exit such that second fluid covers first fluid.

MENCELOGLU Y Z, OKAN B S, YILDIZ M, SANER OKAN B

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Manufacture of graphene involves irradiating near-infrared ray to chamber containing metallic catalyst and carbon source, reacting metallic catalyst and carbon source, and growing graphene on surface of metallic catalyst.

HONG B H, HAN J H, HAN D H, CHOI W T, KIM J D