国家/地区 美国（2）
IPC部 B（2）
IPC大类 B32（2）
IPC小类 B32B（2）
IPC
发明人
公开年 2010（2）
申请年 2008（2）
专利权人

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C

Sidewall graphene device fabricating process, involves forming protruding or mesa structure with sidewall surface, and forming device structure in contact with material layer in fin FET configuration.

CHEN A, KRIVOKAPIC Z