国家/地区 美国（5）
IPC部 B（5）
IPC大类 B32（5）
IPC小类 B32B（5）
IPC B32B038/00（5）
发明人
公开年
申请年 2015（2） 
专利权人

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Structure useful to shield electromagnetic disorders for shielding electromagnetic radiation, comprises thin layer of graphene and flexible substrate, in which thin layer of graphene is applied on flexible substrate and is doped with dopant.

AVOURIS P, GARCIA A V, SUNG C, XIA F, YAN H

Producing graphene, comprises fixing seed crystal to support substrate, providing feedstock adjacent to seed crystal about the location, and applying laser beam to heat portion of seed crystal and portion of feedstock.

HAUCK J P