国家/地区 中国（2）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/04（3）
发明人 ZHANG H（3）
公开年 2014（2）
申请年 2014（2） 
专利权人

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Method of preparing graphene layers on metallic substrate for e.g. paint, involves annealing metallic substrate at initial temperature, cooling for graphene growth and contacting carbon vapor with substrate at final temperature.

YIN Z, DU Z, ZHANG H, ZHU M

Silicon carbide substrate graphene production device includes quartz heating cavity, heating cavity inner bucket, heating chamber, opening cavity, top cover, temperature measuring window, air inlet, air outlet and cooling water exit.

GAO Y, SONG J, WANG J, ZHANG H