国家/地区 台湾（3）
IPC部 B（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/04（3）
发明人
公开年
申请年
专利权人

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Making strip shaped graphene layer used in semiconductor devices e.g. sensor, involves providing carbon nanotube structure comprising film on substrate surface, implanting carbon ions into substrate, and annealing substrate to obtain layer.

LIN X, JIANG K, FAN S

Creating layers of graphene, comprises implanting carbon atoms into a substrate at first temperature and lowering temperature of the substrate, so that the carbon atoms diffuse from substrate.

RAMAPPA D A, SULLIVAN P, RAMAPPA D