国家/地区 韩国（2） 美国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C23C016/26（2）
发明人 KIM C（2）
公开年
申请年
专利权人

Directly growing of carbon material in production of high-quality graphene, involves adsorbing carbons onto substrate by supplying carbons to substrate, and removing unreacted carbon residues from substrate after supplying carbons.

KIM C, SHIN H, BYUN K, SHIN K, LEE C, NAM S, AN S, LEE J, CHO Y, SHIN H J, BYUN K E, SHIN K W, LEE C S, NAM S G, AHN S J, LEE J H, LEE J I, CHO Y C

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H