国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B032/186（3） C23C016/26（3）
发明人 YANG H（4）
公开年 2021（2）
申请年
专利权人 BEIJING GRAP.（2） UNIV PEKING（2）

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Graphene composite metal foil double-side growth device has chemical vapor deposition furnace comprising plasma glow region and heating growth region, and connected with unwinding shaft and winding shaft on both sides.

PENG H, CAO F, YANG H, WANG K, WANG X, LIU Z

Graphene oxide corrosion inhibitor, prepared by e.g. dissolving graphene oxide in a solvent, ultrasonically dispersing to obtain graphene oxide suspension, adding melamine and dicyclohexylcarbazide to graphene oxide suspension and reacting.

LI Y, WANG F, HUANG Y, YANG H

Preparing graphene thin films comprises processing copper foil blank and growing graphene films on copper foil where processing copper foil blank includes e.g. cleaning copper foil blank plasma, decontaminating and treating with oxide layer.

JIN H, LIU Z, QI X, PENG P, YANG H, ZHANG Z, ZHANG W, ZHANG X, DENG K