国家/地区
IPC部 B（2）
IPC大类 C04（2）
IPC小类 C04B（2）
IPC
发明人
公开年 2021（2）
申请年 2021（2）
专利权人

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Anti-burning material for laser cutting machine comprises high temperature resistant reflective coating formed by high temperature-resistant reflective coating, inorganic silicate solution, and nano titanium dioxide.

XU M, ZHANG W, LU S, WANG Y, YANG X