国家/地区 美国（2）
IPC部 B（2）
IPC大类 B82（2）
IPC小类 B82Y（2）
IPC B82Y040/00（2）
发明人
公开年 2012（2）
申请年 2012（2）
专利权人

Method of disposing graphene thin film over target receiving substrate involves hetero-epitaxially growing graphene thin film on catalyst thin film containing a metal and disposing graphene thin film and catalyst thin film.

VEERASAMY V S

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y