国家/地区 韩国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/02（4）
发明人
公开年
申请年 2013（2） 
专利权人

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Method for manufacturing flexible display, involves forming graphene anode/cathode electrode on flexible graphene film on which fluorescence film/protective layer is formed.

JEONG H J, LEE G W, JEONG S Y, HAN J T, JEONG H D, KIM H Y

Graphite nanofibers for electron emitting source and cathode of lithium ion secondary battery comprises graphene sheets having truncated conical shape, sequentially arranged through catalytic metal particles.

MURAKAMI H, HIRAKAWA M, TANAKA C