国家/地区 台湾（3）
IPC部 C（3） H（3） B（2）
IPC大类 C23（3）
IPC小类 C23C（3） H01L（3） C01B（2）
IPC C01B031/04（2） C23C014/06（2） H01L021/02（2）
H01L021/20（2）
发明人
公开年 2010（3）
申请年 2009（3） 
专利权人

Creating layers of graphene, comprises implanting carbon atoms into a substrate at first temperature and lowering temperature of the substrate, so that the carbon atoms diffuse from substrate.

RAMAPPA D A, SULLIVAN P, RAMAPPA D

Method for forming thin coating dielectric material on surface of carbon-based material e.g. graphene, involves forming ultra thin silicon nucleation layer of specific thickness on portion of surface of carbon-based material.

BABICH K, CALLEGARI A, CHEN Z, KIEWRA E, SUN Y

Forming graphene layer used in e.g. transistors, solar panels, involves mixing carbon source with molten solvent, precipitating carbon source from solvent to form graphite layer, and separating graphite layer into several graphene layers.

SUNG C, HU S C, LIN I, YU C, SONG J