国家/地区 世界知识产权组织（4）
IPC部 B（4）
IPC大类 B01（4）
IPC小类 B01J（4）
IPC C01B031/02（4） C23C016/26（4） B82Y030/00（3）
B82Y040/00（3） C01B031/04（3） B01J019/08（2）
B01J023/76（2）
发明人 BACSA R（2） SERP P（2）
公开年 2012（2） 2013（2）
申请年 2011（4）
专利权人 CENT NAT REC.（2） INST NAT POL.（2）

Coproducing carbon nanotube and graphene used in polymer matrix, by decomposition at high temperature of carbon source in gas state, comprises contacting carbon source with catalyst comprising mixture of active catalyst-A and catalyst-B.

BEAUSOLEIL J, SERP P, BACSA R, CAUSSAT B

Producing graphene comprises contacting solid catalyst in divided state comprising mixed oxide with gaseous composition flow comprising carbon source, where solid catalyst has single crystal structure and average crystalline domain size.

BACSA R, SERP P

Fabricating graphene oxide material involves providing substrate; depositing graphene layer onto substrate; and oxidizing portion of graphene layer, with dry oxidation technique for period of time sufficient to obtain band gap.

GHARIB M, ARIA A I, GANI A W

Manufacture of graphene for fabricating graphene semiconductor device, involves contacting reaction gas for graphene growth on substrate surface, heating substrate, and growing graphene.

LEE K, CHOI I, LEE K J, CHOI I S, JAE L G, SEONG C I