国家/地区 美国（3） 世界知识产权组织（3）
IPC部 B（4）
IPC大类 B01（4）
IPC小类 B01J（4）
IPC B82Y040/00（2） C01B031/04（2） C30B029/02（2）
C30B029/36（2）
发明人
公开年 2015（4）
申请年 2014（4）
专利权人

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Manufacture of ordered graphene structure used for multitouch capacitive panel, involves exposing substrate to laser beam in presence of carbon source and moving substrate or laser beam relative to other, or decreasing laser beam power.

OEZYILMAZ B, TOH C T

Iron-based carbide nanocrystals-graphene nanobelt composite material used in e.g. hydrogen evolution catalysis, comprises bottom layer of silicon wafer, graphene nanobelt arrays on silicon wafer, and iron-based carbide nanocrystal.

DONG J, FAN X, GUO X, LIU B, LI C, LIU Q

Composition for electrode used for battery comprises carbonaceous material consisting of graphene and reduced graphene oxide and sodium ions.

SINGH G, DAVID L