国家/地区
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B025/18（2）
发明人
公开年
申请年 2009（2）
专利权人

Preparing graphene on diamond surface, comprises e.g. placing substrate on substrate support in cavity of a filament chemical vapor deposition system and growing a diamond intermediate layer, growing boron doped diamond film and annealing.

LI J, GU C, LU C

Graphene or graphite thin film used for diaphragm structure, is formed on cubic crystal silicon carbide crystal thin film using cubic silicon carbide crystal thin film having specific orientation formed on silicon substrate.

SUEMITSU M, KONNO A, MIYAMOTO Y, MAKI S, ASSEUSI G, YU M