国家/地区 日本（2）
IPC部 B（2）
IPC大类 B01（2） C01（2） C23（2）
IPC小类 B01J（2）
IPC C23C016/26（2）
发明人
公开年 2016（2）
申请年 2015（2）
专利权人

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R