国家/地区 韩国（7）
IPC部 B（7）
IPC大类 B01（7）
IPC小类 B01J（7）
IPC C01B032/182（7）
发明人
公开年 2015（3）
申请年 2015（3） 
专利权人

Composite particles used for forming elastomeric formulation used in tire components such as vehicle tire treads, subtreads, tire carcasses, tire sidewalls, tire belt wedge, and tire wire skim coats, comprise silica, and graphene carbon.

DOS SANTOS FREIRE L, DING Q, KUTCHKO C, PAN S, SILVERNAIL N J, DOS SANTOS F L, LUCAS D S S, DINGCHI, PANSHUYANG, NATJJ S N

Halogenated graphene nanoplatelets used in e.g. energy storage device, comprising graphene layers that are defect-free and free from any element, other than carbon atoms of perimeters of graphene layers, and with specified ratio of bromine.

ZHANG Y, PARKS J C, KADRMAS C R, ODAY J M

Block copolymer used for manufacturing graphene for forming sheet used for electrical component and structural component, comprises substituted hydrocarbon repeating unit and ethylene repeating unit.

LEE M J, SOHN B, CHAE S Y, KWON W J, SOHN K N, SOHN B H, CHAE S, LI M, KWON W, SOHN K

Preparation of sulfonated graphene used for e.g. transparent electroconductive electrode and thermal conductive material, involves contacting reaction medium containing oxidative sulfonating agent with organic material, and heating.

HAO J, JIANG Y, LI J

Particle for particulate material used for composite material, particle dispersion and article comprises stacked sub-structures in which each sub-structure includes stack of graphene layers.

WALTERS I, WALTERS D

Graphite-type carbon raw material used as graphene precursor, has rhombohedral system graphite layer and hexagonal system graphite layer in ratio more than preset value, as measured using peak intensities specific planes of layers.

HASEGAWA S, KAMIYA N, SHOJI H, NAGISA K, HASEGAWA SHOJI, KAMIYA NAGISA, SHEN Y

Manufacture of graphene oxide reduced material for forming electrode for silicon-based semiconductor, involves synthesizing graphite oxide flakes from graphite flakes and forming graphene oxide dispersion solution.

JEONG S, LEE G, HAN J, JEONG H, KIM S, HAN J T, JEONG H J, JEONG S Y, KIM S H, LEE G W