国家/地区 韩国（4） 日本（2） 美国（2）
IPC部 B（4）
IPC大类 B01（4）
IPC小类 B01J（4）
IPC B01J019/08（4）
发明人 CHOI I S（2） LEE K J（2）
公开年 2013（4）
申请年 2011（2） 
专利权人 KOREA ADV IN.（2） KOREA ADVANC.（2）

Preparing graphene used in e.g. memory device, comprises forming organic thin film on substrate, irradiating upper portion of organic thin film with radiation to cross-link organic thin film, and then carbonizing.

CHOI J H, JUNG C H, HWANG I T, KANG D W

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Manufacture of graphene involves forming carbon-doped metal substrate, melting carbon-doped metal substrate by laser beam, cooling substrate and moving carbon-doped metal substrate in cooling phase.

LEE K J, CHOI I S

Producing graphene comprises doping carbon in metallic board, fusing board with carbon by irradiation, cooling fused metallic board, where carbon moves to metal board surface after cooling and growing grapheme on metal board surface.

LEE K J, CHOI I S