国家/地区 中国（7）
IPC部 B（7） C（7） H（2）
IPC大类 B01（7）
IPC小类 B01J（7）
IPC B01J021/18（4） C01B032/184（4） B01J019/12（2）
B01J020/20（2） C01B031/04（2）
发明人 YANG C（7）
公开年 2021（3） 2015（2）
申请年 2021（4）  2015（2） 
专利权人 AVIATION IND.（2）

Preparing graphene microsphere useful catalysts and lithium batteries comprises mixing graphite powder, concentrated sulfuric acid and sodium nitrate, performing ultrasonic dispersion, subjecting colloidal microspheres to hydrothermal treatment, drying and placing in muffle furnace for processing.

LI X, XIAO Z, YANG C

Preparing graphene materials by laser-induced industrial hemp comprises e.g. using industrial hemp as material including carbon precursor, and using laser irradiation to induce carbon precursor to be converted into graphene.

ZENG H, YANG C, HU M

Preparing nitrogen-doped graphene used for preparing absorbing materials, catalysts, by forming rotating arc area comprising center portion and edge portion, guiding nitrogen source to central portion, guiding carbon source to edge, and initiating reaction by arc.

WANG C, SONG M, XIA W, YANG C

Synthesizing manganese molybdatenano-wire/graphene composite material for supercapacitor, involves using graphene, analytically pure white powder of ammonium molybdate and manganese nitrate as raw materials, and distilled water as solvent.

SUN Y, LI C, MAO Z, ZHU Z, YIN G, YANG C, WANG D, ZENG K, CHEN J

Preparing titanium oxide nanoparticle/multilayer graphene composite material, by mixing dimethylformamide and deionized water, adding expanded graphite, processing, preparing dilute nitric acid solution, cooling, washing and drying in oven.

XU J, ZHANG L, ZHAO W, LI M, YANG C

Graphene porous material used for absorbing flue gas that has specified range of specific surface area.

DAI S, HAO S, YANG C, ZHANG X, YAN S

Preparing flue gas adsorption graphene porous material, which is used for adsorption of e.g. phenol, by performing ultrasonic treatment of graphene oxide compound with aqueous solution, and then freeze-drying obtained treatment liquid.

DAI S, HAO S, YANG C, ZHANG X, YAN S