国家/地区 美国（2）
IPC部 B（2） C（2）
IPC大类 B05（2） B32（2） C01（2）
IPC小类 B05D（2）
IPC C01B031/04（2）
发明人
公开年
申请年
专利权人 EMPIRE TECHNOLOGY DEV LLC（2）

System used to at least partially alter defect area in layer of graphene, on substrate, comprises chamber to receive layer including some graphene and defect areas in graphene, and container to e.g. react substrate to produce cationic area.

MILLER S A, YAGER T A

Etching method of graphene, involves etching exposed portions of graphene to form etched graphene structure, after applying resist to surface of graphene opposite to patterned substrate.

ANDERSON K, SJONG A